FRAM Parallel
MB85R8M2T
产品概述
technologies.
The MB85R8M2T is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R8M2T can be used for 1013
■ FEATURES
• Bit configuration : 524,288 words × 16 bits
• Read/write endurance : 1013 times / 16 bits
• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power operation : Operating power supply current 20 mA (Max)
Standby current 300 μA (Max)
Sleep current 40 μA (Max)
• Operation ambient temperature range : − 40 °C to + 85 °C
• Package : 48-pin plastic FBGA (BGA-48P-M24)