FRAM SPI(for H.R.U)

MB85RS4MTY

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产品概述

MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications.

MB85RS4MTY adopts the Serial Peripheral Interface (SPI).

The MB85RS4MTY is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS4MTY can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

As MB85RS4MTY does not need any waiting time in writing process, the write cycle time of MB85RS4MTY is much shorter than that of Flash memories or E2PROM.

■ FEATURES

• Bit configuration : 524,288 words × 8 bits

• Serial Sector Region : 256 words × 8 bits

In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed.

• Unique ID

• Serial Number : 64 bits

In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed.

• Serial Peripheral Interface : SPI (Serial Peripheral Interfaces) 

                                               Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 50 MHz (Max)

• High endurance : 1013 times / byte

• Data retention : 10 years (+85 °C) 

                             2 .75years (+105 °C) 

                             0.85 years (+125 °C) or more

                            Under evaluation for more than 2.5years(+125 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 4 mA (Max@50 MHz) 

                                              Standby current 350 μA (Max) 

                                              Deep Power Down current 30 μA (Max) 

                                              Hibernate current 14 μA (Max)

• Operation ambient temperature range : − 40 °C to + 125 °C

• Package :8-pin plastic DFN 5mm × 6mm 

                 RoHS compliant