MB85RS256TY

MB85RS256TY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications.

MB85RS256TY adopts the Serial Peripheral Interface (SPI).

The MB85RS256TY is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS256TY can be used for 10¹³ read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

As MB85RS256TY does not need any waiting time in writing process, the write cycle time of MB85RS256TY is much shorter than that of Flash memories or E2PROM.

■ FEATURES

• Bit configuration : 32,768 words × 8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface) 

                                              Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 40 MHz (Max)

• High endurance : 10¹³ times / byte

• Data retention : 40.2 years (+85 °C) 

                             10.9 years (+105 °C) 

                             3.38 years (+125 °C) or more 

                             Under evaluation for more than 3.38years(+125 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 2.5 mA (Max@40 MHz) 

                                             Standby current 50 μA (Max)

                                             Sleep current 12 μA (Max)

• Operation ambient temperature range : − 40 °C to + 125 °C

• Package : 8-pin plastic SOP 

                  AEC-Q100 Grade 1 compliant 

                  RoHS compliant