MB85RC04

The MB85RC04 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC04 is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC04 has improved to be at least 10¹² cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC04 does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.

■ FEATURES

• Bit configuration : 512 words × 8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency : 400 KHz (Max)

• Read/write endurance : 10¹² times / byte

• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage: 2.7 V to 3.6 V

• Low-power consumption : Operating power supply current 20 μA (Typ @400 KHz) 

                                              Standby current 1 μA (Typ)

• Operation ambient temperature range: − 40 °C to + 85 °C

• Package : 8-pin plastic SOP (FPT-8P-M02) 

                  RoHS compliant